Interdiffusion in SiC–AlN and AlN–Al2OC Systems

AlN, Al₂OC, and the 2 H form of SiC are isostructural. Both SiC–AlN and AlN–Al₂OC form homogeneous solid solutions above 2000° and 1950°C, respectively. The kinetics of phase separation in the two systems, however, are quite different. Interdiffusion in both SiC–AlN and AlN-Al₂OC systems was examined in the solid-solution regime in an attempt to elucidate differences in the kinetics of phase separation that occur in the two systems when annealed at lower temperatures. Diffusion couples of (SiC)_0.3(AlN)_0.7/(SiC)_0.7(AlN)_0.3 and (AlN)_0.7(Al₂OC)_0.3/(AlN)_0.3(Al₂OC)_0.7 were fabricated by hot pressing and were annealed at high temperatures by encapsulating them in sealed SiC crucibles to suppress loss due to evaporation. Interdiffusion coefficients in (SiC)_0.3-(AlN)_0.7/(SiC)_0.7(AlN)_0.3 diffusion couples were measured at 2373, 2473, and 2573 K, and the corresponding activation energy was determined to be 632 kJ/mol. (AlN)_0.7(Al₂OC)_0.3/ (AlN)_0.3(Al₂OC)_0.7 samples were annealed at 2273 K. The interdiffusion coefficient measured in the AlN–Al₂OC system was much larger than that in the SiC–AlN system.