Improvement of Resistive Switching in $hbox{Cu}_{x} hbox{O}$ Using New RESET Mode

Wide dispersions of memory switching parameters are observed in resistive random access memory based on $hbox{Al/Cu}_{x}hbox{O/Cu}$ structure. Moreover, the switching instability induced by these dispersions is studied. In this letter, a ramped-pulse series operation method is put forward, which can improve switching stability and cycling endurance remarkably. A method for minimizing the dispersion of $V_{rm reset}$ by optimizing the amplitude of pulse is proposed further. The write–read–erase–read operations can be over $hbox{8} times hbox{10}^{3}$ cycles without degradation by using the new operation mode. The role of Joule heating behind this behavior of $ hbox{Al/Cu}_{x}hbox{O/Cu}$ device is discussed.