首页 | 本学科首页   官方微博 | 高级检索  
     


Selective and localized laser annealing effect for high-performance flexible multilayer MoS2 thin-film transistors
Authors:Hyukjun Kwon  Woong Choi  Daeho Lee  Yunsung Lee  Junyeon Kwon  Byungwook Yoo  Costas P. Grigoropoulos  Sunkook Kim
Affiliation:1. Department of Mechanical Engineering, University of California, Berkeley, CA, 94720-1740, USA
2. School of Advanced Materials Engineering, Kookmin University, Seoul, 136-702, South Korea
3. Department of Mechanical Engineering, Gachon University, Seongnam-si, Gyeonggi, 461-701, South Korea
4. Department of Electronics and Radio Engineering, Kyung Hee University, Gyeonggi, 446-701, South Korea
5. Flexible Display Research Center, Korea Electronics Technology Institute, Seongnam, Gyeonggi, 463-816, South Korea
Abstract:transition metaldichalcogenides,MoS2,laser annealingythin-film transistors,flexible electronics
Keywords:transition metaldichalcogenides  MoS2  laser annealingythin-film transistors  flexible electronics
本文献已被 维普 SpringerLink 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号