Effect of oxygen pressure of SiOx buffer layer on the electrical properties of GZO film deposited on PET substrate |
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| Authors: | Byung Du Ahn Young Gun Ko Sang Hoon Oh Jean-Ho Song Hyun Jae Kim |
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| Affiliation: | aSchool of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749, Republic of Korea;bSchool of Materials Science and Engineering, Yeungnam University , Gyeongsan 712-749, Republic of Korea;cLCD Technology, LCD Business, Samsung Electronics, Gyeonggi-Do 446-711, Republic of Korea |
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| Abstract: | The present work was made to investigate the effect of oxygen pressure of SiOx layer on the electrical properties of Ga-doped ZnO (GZO) films deposited on poly-ethylene telephthalate (PET) substrate by utilizing the pulsed-laser deposition at ambient temperature. For this purpose, the SiOx buffer layers were deposited at various oxygen pressures ranging from 13.3 to 46.7 Pa. With increasing oxygen pressure during the deposition of SiOx layer as a buffer, the electrical resistivity of GZO/SiOx/PET films gradually decreased from 7.6 × 10− 3 to 6.8 × 10− 4 Ω·cm, due to the enhanced mobility of GZO films. It was mainly due to the grain size of GZO films related to the roughened surface of the SiOx buffer layers. In addition, the average optical transmittance of GZO/SiOx/PET films in a visible regime was estimated to be ~ 90% comparable to that of GZO deposited onto a glass substrate. |
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| Keywords: | Ga-doped ZnO Polyethylene telephthalate SiOx buffer Electrical resistivity |
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