| 分子束外延生长Al_xGa_(1-x)As/GaAs超晶格及结构、光学特性研究 |
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| 引用本文： | 张允强,高翔,彭正夫,孙娟,蒋树声,章灵军. 分子束外延生长Al_xGa_(1-x)As/GaAs超晶格及结构、光学特性研究[J]. 固体电子学研究与进展, 1993, 0(1) |
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| 作者姓名： | 张允强 高翔 彭正夫 孙娟 蒋树声 章灵军 |
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| 作者单位： | 南京电子器件研究所 210016(张允强，高翔，彭正夫，孙娟)，南京大学固体微结构实验室 210008(蒋树声)，上海红外物理国家实验室 200083(章灵军) |
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| 摘 要： | 报道了分子束外延生长80个周期的Al_xGa_(1-x)As/GaAs超晶格,X射线衍射和透射电镜的结果表明超晶格样品有良好的结构特性,光反射光谱观察到阱内的电子跃迁过程,其结果与理论计算相符。
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| 关 键 词： | 分子束外延 超晶格 X射线衍射 光调制反射光谱 |
Study on the Structural and Optical Properties of Al_xGa_(1-x)As/GaAs Superlattice Grown by Molecular Beam Epitaxy |
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| Zhang Yunqiang,Gao Xiang,Peng Zenfu,Sun Juan. Study on the Structural and Optical Properties of Al_xGa_(1-x)As/GaAs Superlattice Grown by Molecular Beam Epitaxy[J]. Research & Progress of Solid State Electronics, 1993, 0(1) |
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| Authors: | Zhang Yunqiang Gao Xiang Peng Zenfu Sun Juan |
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| Abstract: | An AlxGa1-xAs/GaAs superlattice with 80 periods was grown by molecular beam epitaxy. Results of X-ray diffraction and TEM indicate that the superlattice sample has good structural property. The electron transition process in quantum well is observed by modulated photo-reflection spectrum and agrees with the theoritical calculation. |
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| Keywords: | Molecular Beam Epitaxy Superlattices X-ray Diffraction Modulated Photo-reflection Spectrum |
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