| sol-gel法制备BiLaFeO3薄膜及其电性能 |
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| 引用本文： | 刘红日. sol-gel法制备BiLaFeO3薄膜及其电性能[J]. 电子元件与材料, 2005, 24(9): 8-10 |
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| 作者姓名： | 刘红日 |
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| 作者单位： | 湖北师范学院物理系,湖北,黄石,435002 |
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| 基金项目： | 湖北省优秀中青年创新团队资助项目;湖北省黄石市科技局科研项目;湖北师范学院校科研和教改项目 |
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| 摘 要： | 用sol-gel方法在LaNiO3包覆的Si衬底上制备了(010)择优取向的BiFeO3以及Bi0.95La0.05FeO3薄膜,XRD分析结果表明,通过La的掺杂BiFeO3的择优取向度由77.0%增加到96.6%;铁电性的测试表明,通过La掺杂,使薄膜的介电性和铁电性得到了增强,剩余极化强度由0.15×10–6C/cm2增加到0.2×10–6C/cm2。
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| 关 键 词： | 无机非金属材料 铁磁电材料 BiFeO3薄膜 择优取向 掺杂 铁电性 |
| 文章编号： | 1001-2028（2005）09-0008-03 |
| 收稿时间： | 2005-08-16 |
| 修稿时间： | 2005-08-16 |
Preparation of BiLaFeO3 Thin Film with Sol-gel Method and Its Electric Properties |
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| LIU Hong-ri. Preparation of BiLaFeO3 Thin Film with Sol-gel Method and Its Electric Properties[J]. Electronic Components & Materials, 2005, 24(9): 8-10 |
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| Authors: | LIU Hong-ri |
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| Abstract: | BiFeO3 and Bi0.95La0.05FeO3 of (010) preferred oriented films were prepared on LaNiO3 coated Si substrates by sol-gel method. The results of XRD show that the preferred oriention extent is increased to 96.6% from 77.0% by La doping. The results of ferroelectricity and dielectric property measurement show that the ferroelectricity and dielectric property are enhanced by La doping. Next,the remnant polarization is increased from 0.15×10–6 C/cm2 to 0.2×10–6 C/cm2 . |
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| Keywords: | inorganic non-metallic materials ferroelectromagnetics BiFeO3 thin film. preferred orietation doping ferroelectricity |
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