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Ka波段分布式MEMS移相器低驱动电平容性开关的机电设计
引用本文:贺训军, 吴群, 金博识, 宋明歆, 殷景华,.Ka波段分布式MEMS移相器低驱动电平容性开关的机电设计[J].电子器件,2007,30(5):1835-1838.
作者姓名:贺训军  吴群  金博识  宋明歆  殷景华  
作者单位:1. 哈尔滨工业大学电子与信息技术研究院,哈尔滨,150001;哈尔滨理工大学应用科学学院,哈尔滨,150080
2. 哈尔滨工业大学电子与信息技术研究院,哈尔滨,150001
3. 哈尔滨理工大学应用科学学院,哈尔滨,150080
基金项目:国家自然科学基金 , 哈尔滨工业大学校科研和教改项目
摘    要:为降低Ka波段分布式MEMS移相器容性开关的驱动电压,提出不同形状新型低弹性系数铰链梁结构MEMS电容开关的机电设计概念.采用Intelli SuiteTM和ADS软件分析了三种梁结构MEMS电容开关的位移分布、驱动电压、机械振动模式和射频性能等参数,结果表明:所设计新型beam2结构MEMS电容开关具有优越的机电特性和射频特性,即开关的驱动电压为3V,机械振动模式固有频率都大于31kHz,在35GHz处插入损耗和回波损耗分别为0.082dB和18.6dB,而相移量可达到105.9o.

关 键 词:MEMS移相器  电容开关  低驱动电压  机电特性  射频特性
文章编号:1005-9490(2007)05-1835-04
修稿时间:2006年10月31

Electromechanical Design of Low-Driven Voltage Capacitive Switches Based on Ka-Bank Distributed MEMS Phase Shifters
HE Xun-jun,WU Qun,JIN Bo-shi,SONG Ming-xin,YIN Jing-hua.Electromechanical Design of Low-Driven Voltage Capacitive Switches Based on Ka-Bank Distributed MEMS Phase Shifters[J].Journal of Electron Devices,2007,30(5):1835-1838.
Authors:HE Xun-jun  WU Qun  JIN Bo-shi  SONG Ming-xin  YIN Jing-hua
Affiliation:School of Electronics and Information Technology; Harbin Institute of Technology; Harbin 150001; China; 2.School of Applied Sciences; Harbin University of Science and Technology; Harbin 150080;
Abstract:The RF MEMS capacitive switches have demonstrated great potential in microwave phase shifters and millimeter-wave circuits and devices due to their very low loss,low power consumption,and low cost characteristics.To reduce the driven-voltage of switches based on Ka band distributed MEMS phase shifters,the mechanical designs of different low spring-constant hinge beam structure are presented.The displacement distribution,driven voltage,mechanical modes and RF performance of the switches using these beams are analyzed by using IntelliSuiteTM and ADS software simulation tool.The results demonstrate that for the structure of beam2 switch,the driven voltage is 3 V,the natural frequencies of all modes are more than 31 kHz,the insertion loss and return loss are 0.082dB,18.6 dB at 35 GHz,respectively.At same time,the phase shift of 105.9o is obtained.
Keywords:MEMS phase shifters  capacitive switches  low driven-voltage  electromechanical performance  RF performance
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