GaN n- and p-type Schottky diodes: Effect of dry etch damage |
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| Authors: | Cao X.A. Pearton S.J. Dang G.T. Zhang A.P. Ren F. Van Hove J.M. |
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| Affiliation: | Dept. of Mater. Sci. & Eng., Florida Univ., Gainesville, FL; |
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| Abstract: | The reverse breakdown voltage (VB) and forward turn-on voltage (VF) of n- and p-GaN Schottky diodes were used to examine the effects of Cl2/Ar and Ar plasma damage. Even short plasma exposures (4 secs) produced large changes in both VB and VF, with ion mass being a critical factor in determining the magnitude of the changes. The damage depth was established to be 500-600 Å and the damaged material could be removed in boiling NaOH solutions, producing a full recovery of the diode properties. Annealing at 700 to 800°C under N2 produced only a partial recovery of VB and VF |
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