A JFET-CMOS radiation-tolerant charge-sensitive preamplifier |
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Authors: | Buttler W Hosticka BJ Lutz G Manfredi PF |
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Affiliation: | Fraunhofer Inst. of Microelectron., Circuits & Syst., Duisburg; |
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Abstract: | A monolithic charge-sensitive preamplifier based on n-channel junction field-effect transistors (JFETs) and p-channel MOS has been realized for applications with microelectrode detectors in elementary particle physics. Radiation resistance tests carried out with the preamplifier exposed to γ-rays emitted by a 60Co source have shown no significant increase of the equivalent noise source up to 150-krd absorbed dose |
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