薄层SOS薄膜材料外延生长及其器件应用

亚微米CMOS/SOS器件发展对高质量的100-200纳米厚度的薄层SOS薄膜提出了更高的要求.实验证实;采用CVD方法生长的原生SOS薄膜的晶体质量可以通过固相外延工艺得到明显改进.该工艺包括:硅离子自注入和热退火.X射线双晶衍射和器件电学测量表明:多晶化的SOS薄膜固相外延生长导致硅外延层晶体质量改进和载流子迁移率提高.固相外延改进的薄层SOS薄膜材料能够应用于先进的CMOS电路.

Growth of Thin Silicon on Sapphire (SOS) Film Materials and Device Applications

The increasing emphasis on the sub-micron CMOS/SOS devices has placed a demand for high quality thin silicon on sapphire (SOS) films with thickness of the order 100-200nm. It is demonstrated that the crystalline quality of as-grown thin SOS films by chemically vapor deposition method can be greatly improved by solid phase epitaxy (SPE) process: implantation of self-silicon ions and subsequent thermal annealing. Subsequent regrowth of this amorphous layer leads to a great improvement in silicon layer crystallinity and channel carrier mobility, respectively by double crystal X-ray diffraction and electrical measurements. Thin SPE SOS films would have application to the high-performance CMOS circuitry.