射频磁控反应溅射法制备Y2O3薄膜的工艺研究

采用射频磁控反应溅射法制备氧化钇(Y2O3)薄膜。系统研究了工艺参数对Y2O3薄膜沉积速率的影响规律,使用X射线光电子能谱仪(XPS)分析表征了薄膜的成分。结果表明,Y2O3薄膜的沉积速率随射频功率的增大而增大,在合适的溅射压强下沉积速率呈现极大值,O2/Ar气体流量比和衬底温度的影响不明显,对此从理论上进行了解释。制备的薄膜中Y和O元素的原子浓度基本符合Y2O3的化学计量比。

Preparation Process of Y2O3 Thin Film Using RF Magnetron Reactive Sputtering

Yttrium trioxide(Y_2O_3) thin film has been prepared by using radiation frequency(RF) magnetron reactive sputtering.The influence of process parameters on its deposition rate was studied systematically,and its composition was analyzed by using X-ray photo-electronic spectrographs(XPS).The results show that its deposition rate increases with the increase of RF power and that its peak appears when the film is under appropriate sputtering pressure.The influences of O_2/Ar gas flow ratio and the temperature of substrates are subtle,the theoretical explanation of which was also presented in the paper.The atomic concentration ratio of Y and O in the thin film prepared this way is basically consistent with its stoichiometric ratio.