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Spectroscopy of Single AlInAs Quantum Dots
Authors:I. A. Derebezov  A. V. Gaisler  V. A. Gaisler  D. V. Dmitriev  A. I. Toropov  A. S. Kozhukhov  D. V. Shcheglov  A. V. Latyshev  A. L. Aseev
Affiliation:1.Rzhanov Institute of Semiconductor Physics, Siberian Branch,Russian Academy of Sciences,Novosibirsk,Russia
Abstract:A system of quantum dots based on Al x In1?xAs/Al y Ga1?yAs solid solutions is investigated. The use of Al x In1?xAs wide-gap solid solutions as the basis of quantum dots substantially extends the spectral emission range to the short-wavelength region, including the wavelength region near 770 nm, which is of interest for the development of aerospace systems of quantum cryptography. The optical characteristics of Al x In1?xAs single quantum dots grown by the Stranski–Krastanov mechanism were studied by cryogenic microphotoluminescence. The statistics of the emission of single quantum dot excitons was studied using a Hanbury Brown–Twiss interferometer. The pair photon correlation function indicates the sub-Poissonian nature of the emission statistics, which directly confirms the possibility of developing single-photon emitters based on Al x In1?xAs quantum dots. The fine structure of quantum dot exciton states was investigated at wavelengths near 770 nm. The splitting of the exciton states is found to be similar to the natural width of exciton lines, which is of great interest for the development of entangled photon pair emitters based on Al x In1?xAs quantum dots.
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