Reduction of charge injection into PECVD SiNxHy by control of deposition chemistry

The high rate of charge trapping in thin-film silicon nitride causes its electrical properties to change with stressing level and time. The rate of shift of the high-frequency CV curves of Al/SiN_xH_y/cSi capacitors was used here to measure nitride charging rate and to compare PECVD nitrides deposited under various conditions of plasma power and gas mixture in the same parallel-plate reactor. By operating the plasma under high power to activate the NH₃ or N₂ and under low SiH₄ flow to ensure that all of the SiH4 reacts with N, it is possible to deposit N-rich nitride that has no detectable Si—H bonding, which bonding others have correlated with charge trapping. Nitride deposited under these conditions using NH₃ and 13 MHz rf power had charging rates for both gate polarities that were 20 times lower than those of nitride that had a “stoichiometric” N/Si ratio of 4/3 and that had its H distributed among Si—H and N—H bonds. MIS capacitors made with the latter nitride also had a high negative initial flat-bond voltage, indicating the presence of grown-in positive charge. This charge was large enough to invert the surface ofp-Si substrates. N-rich nitride free of Si—H that was deposited either using N₂ or using low-frequency rf power (≤400 kHz) had higher charging rates than did that deposited from NH₃ at 13 MHz. Also, the low-frequency material contained grown-in positive charge that is attributed to H⁺ implanted by the high ion bombardment energy of the low-frequency plasma.