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Graded Heterojunction of AIGalnP High-brightness Light Emitting Diodes
作者姓名:LIULu  FANGuang-han  LIAOChang-jun
作者单位:[1]Dept.ofMechan.Eng.,GuangdongLightIndustryTechnicalCollege,Guangzhou510300,CHN [2]Lab.ofPhoto--electron.Mater.andTechnol.,Inform.andPhotoelectr.Institute,SouthChinaNormalUniversity,Guangzhou510631,CHN [3]QuantumandElectronInstitute,Inform.andPhotoelectr.Institute,SouthChinaNormalUniversity,Guangzhou510631CHN
基金项目:Key Technology Project of Guangzhou City (1999-z-035-01)
摘    要:A simple model of the graded heterojunction in AIGalnP compound semiconductors was introduced to analyze the band profile. The band profiles are analyzed with the different grading ways but the same grading length and under the different doping densities. The effect of the different grading lengths on the surplus of the potential of the spike to the potential of N region are also analyzed under the different doping densities. Through the experiments, it proves that the performances of high brightness light emitting diodes can be improved by the effects of the graded heterojunction.

关 键 词:AlGaInP  LED  异质结  发光二极管  亮度
收稿时间:2003/7/11

Graded Heterojunction of AlGaInP High-brightness Light Emitting Diodes
LIULu FANGuang-han LIAOChang-jun.Graded Heterojunction of AIGalnP High-brightness Light Emitting Diodes[J].Semiconductor Photonics and Technology,2004,10(2):86-92.
Abstract:A simple model of the graded heterojunction in AlGaInP compound semiconductors was introduced to analyze the band profile. The band profiles are analyzed with the different grading ways but the same grading length and under the different doping densities. The effect of the different grading lengths on the surplus of the potential of the spike to the potential of N region are also analyzed under the different doping densities. Through the experiments,it proves that the performances of high brightness light emitting diodes can be improved by the effects of the graded heterojunction.
Keywords:AlGaInP  Heterojunction  LED
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