| Graded Heterojunction of AIGalnP High-brightness Light Emitting Diodes |
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| 引用本文： | LIULu FANGuang-han LIAOChang-jun. Graded Heterojunction of AIGalnP High-brightness Light Emitting Diodes[J]. 半导体光子学与技术, 2004, 10(2): 86-92 |
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| 作者姓名： | LIULu FANGuang-han LIAOChang-jun |
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| 作者单位： | [1]Dept.ofMechan.Eng.,GuangdongLightIndustryTechnicalCollege,Guangzhou510300,CHN [2]Lab.ofPhoto--electron.Mater.andTechnol.,Inform.andPhotoelectr.Institute,SouthChinaNormalUniversity,Guangzhou510631,CHN [3]QuantumandElectronInstitute,Inform.andPhotoelectr.Institute,SouthChinaNormalUniversity,Guangzhou510631CHN |
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| 基金项目： | Key Technology Project of Guangzhou City (1999-z-035-01) |
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| 摘 要： | A simple model of the graded heterojunction in AIGalnP compound semiconductors was introduced to analyze the band profile. The band profiles are analyzed with the different grading ways but the same grading length and under the different doping densities. The effect of the different grading lengths on the surplus of the potential of the spike to the potential of N region are also analyzed under the different doping densities. Through the experiments, it proves that the performances of high brightness light emitting diodes can be improved by the effects of the graded heterojunction.
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| 关 键 词： | AlGaInP LED 异质结 发光二极管 亮度 |
| 收稿时间： | 2003-07-11 |
Graded Heterojunction of AlGaInP High-brightness Light Emitting Diodes |
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| Abstract: | A simple model of the graded heterojunction in AlGaInP compound semiconductors was introduced to analyze the band profile. The band profiles are analyzed with the different grading ways but the same grading length and under the different doping densities. The effect of the different grading lengths on the surplus of the potential of the spike to the potential of N region are also analyzed under the different doping densities. Through the experiments,it proves that the performances of high brightness light emitting diodes can be improved by the effects of the graded heterojunction. |
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| Keywords: | AlGaInP Heterojunction LED |
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