Cl2 chemical dry etching of GaAs under high vacuum conditions—Crystallographic etching and its mechanism |
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Authors: | N. Furuhata H. Miyamoto A. Okamoto K. Ohata |
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Affiliation: | (1) Microelectronics Research Laboratories, NEC Corporation, 4-1-1, Miyazaki, Miyamae-ku, 213 Kawasaki, Japan |
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Abstract: | Cl2 chemical dry etching for GaAs substrates of {111}A, {111}B, {110} and {100} orientations was accomplished under high vacuum conditions. The etch rate for different substrate orientations was {111}B > {110} = {100} > {111}A for temperatures below 450° C, and was nearly equal for temperatures above 450° C. For {111}B, {110} and {100} substrates, the etch rate depends strongly on the substrate temperature above 450° C and below 150° C. Two activation energies for etching (10.0 kcal/mol below 150° C and 16.0 kcal/mol above 450° C) were obtained. Between 150 and 450° C, the etch rate depends weakly on the substrate temperature. However, for {111}A substrate, the etch rate increased monotonically with increasing substrate temperature above 300° C. The activation energy corresponds to that for the other substrates above 450° C. These results are caused by the surface chemical reaction of GaAs/Cl2. By using these etching properties, a vertical side wall was fabricated without ion bombardment. |
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Keywords: | Chemical dry etching GaAs crystallographic etching |
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