| 中国集成电路多层布线工艺技术的实践及发展方向 |
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| 引用本文： | 马洁荪. 中国集成电路多层布线工艺技术的实践及发展方向[J]. 微电子技术, 1999, 0(3) |
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| 作者姓名： | 马洁荪 |
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| 作者单位： | 绍兴华越微电子有限公司!绍兴，312000 |
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| 摘 要： | 本文结合我公司双层布线工艺技术的自我实践及我公司与日本富士通公司技术合作的成果，再引用当今世界上最先进的CMP多层布线技术，来阐述我国集成电路双层布线技术的实践及发展方向。
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| 关 键 词： | 多层布线 介质 接触电阻 CMP |
The Pratice and trend of IC Multi-layer Interconnect Technology in China |
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| Ma Jiesun. The Pratice and trend of IC Multi-layer Interconnect Technology in China[J]. Microelectronic Technology, 1999, 0(3) |
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| Authors: | Ma Jiesun |
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| Abstract: | By taking Si3N4 and PSG as the dielectric layer the short of two metals has beensolved. The small hill of metal 1 has disappeared after ion implanted. Application of RF-etching, the contact resistor betwen two metals has been reduced. Current available tech-nologies such as spin-on-glass (SOG) are succesfully using in FAB of HUAYUE COMPA-NY. At last, this paper introduces the CMP technologies, that is the most revolutionaryconcept in multilevel intereonnect integration area in recent years. |
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| Keywords: | multi-layer dielectric contact-resistor CMP |
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