A study on the etch characteristics of HfAlO3 dielectric thin film in Cl2/Ar gas chemistry using inductively coupled plasma system |
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Authors: | Jong-Chang WooTae-Kyung Ha Doo-Seung UmJuyun Park Yong-Cheol KangChang-Il Kim |
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Affiliation: | a School of Electrical and Electrics Engineering, Chung-Ang University, Seoul 156-756, Republic of Koreab Department of Chemistry, Pukyong National University, Busan 608-737, Republic of Korea |
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Abstract: | Thin films of HfAlO3, a high-k material, were etched using inductively-coupled plasma. The dry etching mechanism of the HfAlO3 thin film was studied by varying the Cl2/Ar gas mixing ratio, RF power, direct current bias voltage, and process pressure. The maximum etch rate of the HfAlO3 thin film was 16.9 nm/min at a C12/(C12 + Ar) ratio of 80%. Our results showed that the highest etch rate of the HfAlO3 thin films was achieved by reactive ion etching using Cl radicals, due to the high volatility of the metal-chlorides. Consequently, the increased chemical effect caused an increase in the etch rate of the HfAlO3 thin film. Surface analysis by x-ray photoelectron spectroscopy showed evidence that Hf, Al and O reacted with Cl and formed nonvolatile metal-oxide compounds and volatile metal-chlorides. This effect may be related to the concurrence of chemical and physical pathways in the ion-assisted chemical reaction. |
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Keywords: | Hafnium aluminum oxide Etching High dielectric constant materials Inductively coupled plasma Plasma etching Chlorine X-ray photoelectron spectroscopy |
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