Electrical simulations of doped multilayer organic light‐emitting diodes (OLEDs) under temperature stress for high current densities |
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Authors: | Christophe Pinot Héle`ne Cloarec Henri Doyeux Gunther Haas Tony Maindron Christophe Prat David Vaufrey Yvan Bonnassieux |
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Affiliation: | 1. Thomson R&D France, 1 avenue Belle Fontaine, CS 17616, Cesson‐Sévigné, France;2. CEA‐LETI Minatec, 17 rue des Martyrs, 38054 Grenoble, France;3. Laboratoire de Physique des Interfaces et des Couches Minces, CNRS, Palaiseau, France |
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Abstract: | Abstract— This work aims at explaining and predicting the influence of the thickness of organic materials, dye doping, and space‐charge effects on charge‐carrier transport at different operating temperatures for high current densities (50 ≤ J ≤ 7000 mA/cm2). For the purpose of determining these influences, current‐voltage characteristics for typical electrically doped multilayer organic light‐emitting diodes (OLEDs) have been simulated. The results of the simulations concur with experimental data. |
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Keywords: | OLED space charge doping electrical modeling finite elements |
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