| 国产高效GaInP/GaAs/Ge三结太阳电池的低能质子辐射效应 |
| |
| 引用本文： | 王荣,刘运宏,孙旭芳,崔新宇.国产高效GaInP/GaAs/Ge三结太阳电池的低能质子辐射效应[J].半导体学报,2007,28(10):1599-1602. |
| |
| 作者姓名： | 王荣 刘运宏 孙旭芳 崔新宇 |
| |
| 作者单位： | 北京师范大学射线束技术与材料改性教育部重点实验室，北京师范大学低能核物理研究所，北京市辐射中心，北京 100875;北京师范大学射线束技术与材料改性教育部重点实验室，北京师范大学低能核物理研究所，北京市辐射中心，北京 100875;北京师范大学射线束技术与材料改性教育部重点实验室，北京师范大学低能核物理研究所，北京市辐射中心，北京 100875;中国电子科技集团公司第十八研究所，天津 300381 |
| |
| 基金项目： | 国家自然科学基金
,
北京市自然科学基金 |
| |
| 摘 要： | 运用2×1.7MV串列静电加速器提供的质子束,对MOCVD方法制备的GaInP/GaAs/Ge三结电池进行低能质子辐射效应研究.选质子能量为0.28,0.62和2.80MeV,辐照注量为1×1010,1×1011,1×1012和1×1013cm-2.对电池的辐射效应用I-V特性和光谱响应测试进行分析.研究结果表明:随辐照注量的增加,太阳电池性能参数Lsc,Voc和Pmax的衰降幅度均增大;但随质子辐照能量的增加,Lsc,Voc和Pmax的衰降幅度均减小.实验中0.28MeV质子辐照引起电池Lsc,Voc,Pmax衰降最显著,三结电池中光谱响应衰降最明显的是中间GaAs电池.
|
| 关 键 词： | GaInP/GaAs/Ge太阳电池 质子辐照 光谱响应 |
| 文章编号： | 0253-4177（2007）10-1599-04 |
| 收稿时间： | 3/6/2007 12:00:00 AM |
| 修稿时间： | 5/7/2007 12:00:00 AM |
Low-Energy Proton Irradiation Effects of GaInP/GaAs/Ge Triple-Junction Solar Cells for Space Use |
| |
| Wang Rong,Liu Yunhong,Sun Xufang and Cui Xinyu.Low-Energy Proton Irradiation Effects of GaInP/GaAs/Ge Triple-Junction Solar Cells for Space Use[J].Chinese Journal of Semiconductors,2007,28(10):1599-1602. |
| |
| Authors: | Wang Rong Liu Yunhong Sun Xufang and Cui Xinyu |
| |
| Affiliation: | Key Laboratory of Beam Technology and Materials Modification of the Ministry of Education,Beijing Radiation Center,Institute of Low Energy Nuclear Physics,Beijing Normal University,Beijing 100875,China;Key Laboratory of Beam Technology and Materials Modification of the Ministry of Education,Beijing Radiation Center,Institute of Low Energy Nuclear Physics,Beijing Normal University,Beijing 100875,China;Key Laboratory of Beam Technology and Materials Modification of the Ministry of Education,Beijing Radiation Center,Institute of Low Energy Nuclear Physics,Beijing Normal University,Beijing 100875,China;Tianjin Institute of Power Sources,Tianjin 300381,China |
| |
| Abstract: | GaInP/GaAs/Ge triple-junction (3J) solar cells fabricated by metal-organic chemical vapor deposition were irradiated with 0.28,0.62,and 2.80MeV protons at doses ranging from 1e10 to 1e13cm-2 using a 2×1.7MV tandem accelerator.The performance degradation of the 3J solar cells was analyzed with current-voltage characteristics and spectral response measurements.The degradation rates of the short circuit current (Isc),open circuit voltage (Voc),and maximum power output (Pmax) were found to increase as the proton irradiation dose increased,but the degradation rates of Isc,Voc,and Pmax decreased as the proton irradiation energy increased.Irradiation with a proton energy of 0.28MeV gave rise to the highest degradation rates of Isc,Voc,and Pmax of the solar cells.Also,the spectral response of the GaAs middle cell in 3J solar cells was degraded more significantly than the GaInP top cell. |
| |
| Keywords: | GaInP/GaAs/Ge solar cell proton irradiation spectral response |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
| 点击此处可从《半导体学报》浏览原始摘要信息 |
|
点击此处可从《半导体学报》下载全文 |
|
