| 一种硅四层键合的高对称电容式加速度传感器 |
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| 引用本文： | 徐玮鹤,车录锋,李玉芳,熊 斌,王跃林.一种硅四层键合的高对称电容式加速度传感器[J].半导体学报,2007,28(10):1620-1624. |
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| 作者姓名： | 徐玮鹤 车录锋 李玉芳 熊 斌 王跃林 |
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| 作者单位： | 中国科学院上海微系统与信息技术研究所 传感技术国家重点实验室，上海 200050;中国科学院研究生院，北京 100049;中国科学院上海微系统与信息技术研究所 传感技术国家重点实验室，上海 200050;中国科学院上海微系统与信息技术研究所 传感技术国家重点实验室，上海 200050;中国科学院上海微系统与信息技术研究所 传感技术国家重点实验室，上海 200050;中国科学院上海微系统与信息技术研究所 传感技术国家重点实验室，上海 200050 |
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| 基金项目： | 国家高技术研究发展计划(863计划) |
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| 摘 要： | 提出了一种利用体微机械加工技术制作的硅四层键合高对称电容式加速度传感器.采用硅/硅直接键合技术实现中间对称梁质量块结构的制作,然后采用硼硅玻璃软化键合方法完成上、下电极的键合.在完成整体结构圆片级真空封装的同时,通过引线腔结构方便地实现了中间电极的引线.传感器芯片大小为6.8mm×5.6mm×1.68mm,其中敏感质量块尺寸为3.2mm×3.2mm×0.84mm.对封装的传感器性能进行了初步测试,结果表明制作的传感器漏率小于0.1×10-9cm3/s,灵敏度约为6pF/g,品质因子为35,谐振频率为489Hz.
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| 关 键 词： | 电容式加速度传感器 硅/硅键合 圆片级真空封装 |
| 文章编号： | 0253-4177（2007）10-1620-05 |
| 修稿时间： | 2007-04-10 |
A Highly Symmetrical Capacitive Accelerometer by Silicon Four-Layer Bonding |
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| Xu Weihe,Che Lufeng,Li Yufang,Xiong Bin and Wang Yuelin.A Highly Symmetrical Capacitive Accelerometer by Silicon Four-Layer Bonding[J].Chinese Journal of Semiconductors,2007,28(10):1620-1624. |
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| Authors: | Xu Weihe Che Lufeng Li Yufang Xiong Bin and Wang Yuelin |
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| Affiliation: | State Key Laboratory of Transducer Technology,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China;Graduate University of the Chinese Academy of Sciences,Beijing 100049,China;State Key Laboratory of Transducer Technology,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China;State Key Laboratory of Transducer Technology,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China;State Key Laboratory of Transducer Technology,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China;State Key Laboratory of Transducer Technology,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China |
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| Abstract: | This paper presents a highly symmetrical capacitive accelerometer fabricated by four silicon wafers bonded together.The cantilever-mass structure is fabricated by bonding two wafers together by silicon fusion,and the two static electrodes are bonded later by low-temperature glass melting.Through the silicon bonding,we achieve a wafer-level vacuum package,and the wire-bonding PAD is made after the fabrication is complete.The dimensions of the chip are 6.8mm×5.6mm×1.68mm,and those of the mass are 3.2mm×3.2mm×0.84mm.The test results of the sensor show that the sensitivity is about 6pF/g,the Q value is 35,the resonant frequency is 489Hz,and the leakage is less than 0.1e-9cm3/s. |
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| Keywords: | capacitive accelerometer silicon bonding wafer-level vacuum package |
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