常压射频冷等离子体刻蚀硅的研究

介绍一种新型的常压射频低温冷等离子放电设备,并用该设备进行硅刻蚀的工艺实验.研究了刻蚀硅的速率随等离子体放电功率、气体流量以及衬底温度的变化规律,并得到了最大刻蚀速率为390nm/min.利用台阶仪、显微镜和扫描电镜(SEM)对刻蚀效果进行检测与分析,证实了该设备对硅的浅刻蚀具有较好的均匀性和较高的各向异性.结果表明,该设备在常压下刻蚀硅,操作简单且不易对材料表面产生损伤.

Etching Si Wafer Using Atmospheric Pressure RF Cold Plasma Jet

A new kind of discharging device with a RF cold plasma jet at atmospheric pressure is introduced,and it is utilized to conduct experimental research on silicon-etching.The characteristics of the etching rate depend on the input power,gas flow,and temperature of Si wafers.The maximal etching rate is 390nm/min.The etching effect is characterized by step instrument,optical microscopy,and SEM.Excellent etching homogeneity and satisfactory anisotropy can be obtained during material etching with this device.These results indicate that the silicon-etching operation with this atmospheric pressure device is simple and causes no material surface damage.