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Very high-transconductance heterojunction field-effect transistor (HFET) |
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| Authors: | Taylor GW Lebby MS Chang TY Gnall RN Sauer N Tell B Simmons JG |
| Affiliation: | AT&T Bell Laboratories, Holmdel, USA; |
| Abstract: | A new form of FET has been demonstrated in the GaAs/AlGaAs material system. Designated the HFET, it has shown a transconductance of 500mS/mm at 300K for a nominal Lg =2?m and a drain current of 430mA/mm. The conduction occurs in an inversion channel at the heterointerface. |
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