Very high-transconductance heterojunction field-effect transistor (HFET) |
| |
Authors: | Taylor G.W. Lebby M.S. Chang T.Y. Gnall R.N. Sauer N. Tell B. Simmons J.G. |
| |
Affiliation: | AT&T Bell Laboratories, Holmdel, USA; |
| |
Abstract: | A new form of FET has been demonstrated in the GaAs/AlGaAs material system. Designated the HFET, it has shown a transconductance of 500mS/mm at 300K for a nominal Lg =2?m and a drain current of 430mA/mm. The conduction occurs in an inversion channel at the heterointerface. |
| |
Keywords: | |
|
|