An indium phosphide MMIC amplifier for 180-205 GHz |
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Authors: | Archer JW Lai R Grundbacher R Barsky M Tsai R Reid P |
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Affiliation: | CSIRO, Epping, NSW; |
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Abstract: | This paper describes a high-performance indium phosphide (InP) monolithic microwave integrated circuit (MMIC) amplifier, which has been developed for application in radioastronomy and imaging-array receivers. Implemented using coplanar waveguide, the six-stage amplifier exhibits 15 db gain, 10 dB input and output return loss, and low noise figure over the 180-205 GHz frequency range. Only one design pass was needed to obtain excellent agreement between the predicted and measured characteristics of the circuit, a unique achievement in this frequency band. The circuit is also the first 180-205 GHz amplifier designed for and successfully fabricated using TRW's standard 0.1-μm InP HEMT process |
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