| 高k绝缘层研究动态 |
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| 引用本文： | 翁寿松. 高k绝缘层研究动态[J]. 微纳电子技术, 2005, 42(5): 220-224 |
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| 作者姓名： | 翁寿松 |
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| 作者单位： | 无锡市罗特电子有限公司,江苏,无锡,214002 |
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| 摘 要： | 介绍了ITRS2003对高k绝缘层材料的要求、高k绝缘层材料必须满足的要求、高k绝缘材料(尤其是HfSiON材料)研究成果以及研究中存在的问题。
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| 关 键 词： | 高k绝缘层 栅结构 栅介质 HfSiON薄膜 |
| 文章编号： | 1671-4776(2005)05-0220-04 |
| 修稿时间： | 2004-08-29 |
Recent Researching Trends in the High-k Insulating Layer |
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| WENG Shou-song. Recent Researching Trends in the High-k Insulating Layer[J]. Micronanoelectronic Technology, 2005, 42(5): 220-224 |
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| Authors: | WENG Shou-song |
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| Abstract: | The demand of the ITRS2003 for the high-k insulating layer material,basic claim of the high-k insulating layer material,the research achievements of the high-k insulating material especially HfSiON material and the problems in research are introduced. |
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| Keywords: | high-k insulating layer gate structure gate dielectric HfSiON thin film |
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