Diffusion of silicon in aluminum |
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Authors: | Shin-ichiro Fujikawa Ken-ichi Hirano Yoshiaki Fukushima |
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Affiliation: | (1) Department of Materials Science, Faculty of Engineering, Tohoku University, 980 Sendai, Japan;(2) Tyota Central Laboratory, 468 Nagoya, Japan |
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Abstract: | Interdiffusion coefficients in Al-Si alloys were determined by Matano’s method in the tem-perature range from 753 to 893 K
with the couple consisting of pure aluminum and an Al-Si alloy. Temperature dependence of the impurity diffusion coefficients
of Si in Al, obtained by extrapolation of the concentration dependence of the interdiffusion coeffi-cient to zero mole fraction
of Si, is given by the following equation: DSi/Al = (2.02+0.97
-0.66 × 10-4 exp -(136 ±3) kJ mol-1/RT] m2/s. p ] The Kirkendall marker was found to move toward the Si-rich side, indicating that the Si atom diffuses faster than
the Al atom in Al-Si alloys. From the interdiffusion coeffi-cient and the marker shift, the intrinsic diffusion coefficients
were calculated.
The difference in the activation energies (ΔQ) between the impurity diffusion of Si in Al and the self-diffusion of Al was
estimated by means of the asymptotic oscillating po-tential and the Le Claire theory. The calculated value of ΔQ is in fair
agreement with the experimental value. The vacancy-solute binding energy for Si in Al was also dis-cussed based on the diffusion
data.
formerly Undergraduate Student, Tohoku University |
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Keywords: | |
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