IR spectra and etch rates of plasma-enhanced chemically vapour-deposited phosphosilicate glass films

IR transmission spectra of phosphosilicate glass (PSG) films with 8 wt.% P prepared by plasma-enhanced chemical vapour deposition (PECVD) and CVD are compared. The differential IR spectrum of a PECVD PSG film differs from that of a CVD PSG film: the P=O peak has a lower intensity than the corresponding peak of the CVD film with the same phosphorus content; no peaks are evident at 980 and 500 cm^?1—the characteristic frequencies for P---O---P stretching and bending vibrations. The differential IR spectra of PECVD and CVD PSG films become very similar after annealing for 4 h in water vapour at 850°C. The etch rate of a PECVD film in p-etchant, which is constant throughout the film thickness, is 400 Å min^?1. However, the etch rate recorded after the film is subjected to annealing in water vapour at 850°C varies with the depth in the film, attaining values as high as 800 Å min^?1 in the region near the outer surface of the film. The results are explained as due to the oxidation of P₂O₃ to P₂O₅.