| Simulation of a Double-Gate Dynamic Threshold Voltage Fully Depleted Silicon-on-Insulator nMOSFET |
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| 引用本文： | Bi Jinshun,Wu Junfeng,Hai Chaohe. Simulation of a Double-Gate Dynamic Threshold Voltage Fully Depleted Silicon-on-Insulator nMOSFET[J]. 半导体学报, 2006, 27(1): 35-40 |
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| 作者姓名： | Bi Jinshun Wu Junfeng Hai Chaohe |
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| 作者单位： | 中国科学院微电子研究所，北京 100029;中国科学院微电子研究所，北京 100029;中国科学院微电子研究所，北京 100029 |
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| 摘 要： | 提出了新型全耗尽SOI平面双栅动态阈值nMOS场效应晶体管,模拟并讨论了器件结构、相应的工艺技术和工作机理.对于nMOS器件,背栅n阱是通过剂量为3×1013cm-2,能量为250keV的磷离子注入实现的,并与n 前栅多晶硅直接相连.这项技术与体硅工艺完全兼容.通过Tsuprem4和Medici模拟,发现全耗尽SOI平面双栅动态阈值nMOSFET保持了传统全耗尽SOI nMOSFET的优势,消除了反常亚阈值斜率和kink效应,同时较传统全耗尽SOI nMOSFET有更加优秀的电流驱动能力和跨导特性.
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| 关 键 词： | 双栅结构 动态阈值 全耗尽绝缘体上硅 nMOS场效应晶体管 double-gate structure dynamicthreshold FDSOI nMOSFET 双栅 动态阈值 nMOSFET 数值模拟 Threshold Voltage Dynamic anomalous subthreshold slope effects better Simulation results show method compatible conventional bulk polysilicon processes energy |
| 文章编号： | 0253-4177(2006)01-0035-06 |
| 修稿时间： | 2005-05-25 |
Simulation of a Double-Gate Dynamic Threshold Voltage Fully Depleted Silicon-on-Insulator nMOSFET |
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| Bi Jinshun,Wu Junfeng and Hai Chaohe. Simulation of a Double-Gate Dynamic Threshold Voltage Fully Depleted Silicon-on-Insulator nMOSFET[J]. Chinese Journal of Semiconductors, 2006, 27(1): 35-40 |
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| Authors: | Bi Jinshun Wu Junfeng Hai Chaohe |
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| Affiliation: | Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China |
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| Abstract: | A novel planar DGDT FDSOI nMOSFET is presented,and the operation mechanism is discussed.The device fabrication processes and characteristics are simulated with Tsuprem 4 and Medici.The back-gate n-well is formed by implantation of phosphorus at a dosage of 3×1013cm-2 and an energy of 250keV and connected directly to a front-gate n+ polysilicon.This method is completely compatible with the conventional bulk silicon process.Simulation results show that a DGDT FDSOI nMOSFET not only retains the advantages of a conventional FDSOI nMOSFET over a partially depleted (PD) SOI nMOSFET--that is the avoidance of anomalous subthreshold slope and kink effects but also shows a better drivability than a conventional FDSOI nMOSFET. |
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| Keywords: | double-gate structure dynamic threshold FDSOI nMOSFET |
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