Plasma ion implantation hydrogenation of poly-Si CMOS thin-filmtransistors at low energy and high dose rate using aninductively-coupled plasma source |
| |
Authors: | Shu Qin Yuanzhong Zhou Nakatsugawa T Husein IF Chung Chan Tsu-Jae King |
| |
Affiliation: | Dept. of Electr. & Comput. Eng., Northeastern Univ., Boston, MA; |
| |
Abstract: | Defect passivation in polycrystalline silicon (poly-Si) CMOS thin-film transistors (TFT's) has been performed by plasma ion implantation (PII) hydrogenation process. Implantation at low energy (2 keV) and high dose rate(~1016/cm2 S) was achieved by an inductively-coupled plasma source. The device parameter improvements are saturated in 3-4 min, which is much shorter than other hydrogenation methods reported in the literature. The stress measurements indicate that the devices hydrogenated by this new technique have much better long-term reliability than that hydrogenated by other techniques |
| |
Keywords: | |
|
|