缓冲层厚度对透明导电薄膜ZnO:Zr性能的影响

利用直流磁控溅射法在有ZnO:Zr缓冲层的水冷玻璃衬底上成功制备出了ZnO:Zr透明导电薄膜,缓冲层的厚度介于35～208 nm.利用XRD、SEM、四探针测试仪和紫外-可见分光光度计研究ZnO:Zr薄膜的结构、形貌、电光性能.结果表明,薄膜的颗粒尺寸和电阻率对缓冲层厚度具有较强的依赖性.当缓冲层厚度从35 nm增加到103 nm时,薄膜的颗粒尺寸增大,电阻率减小.而当缓冲层厚度从103 nm增加到208 nm时,薄膜的颗粒尺寸减小,电阻率增大.当缓冲厚度为103 nm时,薄膜的电阻率最小为2.96×10-3 Ω·cm,远小于没有缓冲层时的12.9×10-3 Ω·cm.实验结果表明,在沉积薄膜之前先沉积一层适当的缓冲层是提高ZnO:Zr薄膜质量的一种有效方法.

Influence of Buffer Layer Thickness on Properties of Transparent Conducting ZnO: Zr Films

Transparent conducting zirconium-doped zinc oxide (ZnO:Zr) thin films were successfully prepared on water-cooled glass substrates with different ZnO:Zr buffer layer thicknesses between 35 nm and 208 nm by DC magnetron sputtering. The structure, morphology, electrical and properties of ZnO : Zr films were investigated by XRD, SEM, four-point probe measurements and ultraviolet-visible spectrophotometers, respectively. It was found that the grain size and electrical resistivity of the films strongly depended on the thickness of the buffer layer. When the buffer layer thickness increases from 35 nm to 103 nm, the electrical resistivity obviously decreases due to the increase of the grain size. While the buffer layer thickness increases from 103 nm to 208 nm, the electrical resistivity increases due to the decrease of the grain size. The films deposited on proper buffer layer before deposition is an effective method to improve the quality of ZnO:Zr films.