| 三指发射极InGaP/GaAs HBT的研制 |
| |
| 引用本文： | 杨威,刘训春,朱旻,王润梅,申华军.三指发射极InGaP/GaAs HBT的研制[J].半导体学报,2006,27(9):1604-1607. |
| |
| 作者姓名： | 杨威 刘训春 朱旻 王润梅 申华军 |
| |
| 作者单位： | 中国科学院微电子研究所,北京100029 |
| |
| 基金项目： | 中国科学院知识创新工程项目 |
| |
| 摘 要： | 异质结双极型晶体管(HBT)是MMIC领域中最具有竞争力的三端器件之一.本文提出了一种三指发射极HBT的设计.通过与同一版上两指发射极HBT比较,证实了该设计的工艺宽容度高、可靠性和一致性好、成品率高,并且仍然具有两指发射极HBT良好的击穿、直流和高频特性.
|
| 关 键 词： | 异质结双极型晶体管 三指发射极 自对准 发射极 InGaP GaAS 高频特性 击穿 成品率 一致性 宽容度 工艺 比较 设计 三端器件 竞争力 MMIC 异质结双极型晶体管 |
| 文章编号： | 0253-4177(2006)09-1604-04 |
| 收稿时间： | 2/17/2006 2:46:45 PM |
| 修稿时间： | 6/5/2006 4:17:36 PM |
Fabrication of a New-Layout InGaP/GaAs HBT |
| |
| Yang Wei,Liu Xunchun,Zhu Min,Wang Runmei and Shen Huajun.Fabrication of a New-Layout InGaP/GaAs HBT[J].Chinese Journal of Semiconductors,2006,27(9):1604-1607. |
| |
| Authors: | Yang Wei Liu Xunchun Zhu Min Wang Runmei and Shen Huajun |
| |
| Affiliation: | Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China |
| |
| Abstract: | The HBT is one of the most important devices in microwave and millimeter wave fields due to its outstanding performance and high reliability.A novel-layout HBT that employs a three-finger emitter is demonstrated.Compared to an HBT with a two-finger emitter,this device has good process tolerance,high yield,and good uniformity.Furthermore,it has superior DC and high-frequency characteristics. |
| |
| Keywords: | HBT three-finger emitter self-aligned |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
| 点击此处可从《半导体学报》浏览原始摘要信息 |
|
点击此处可从《半导体学报》下载全文 |
|
