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Reliability evaluation of class-E and class-a power amplifiers with nanoscaled CMOS technology
Authors:Wei-Cheng Lin Tsung-Chien Wu Yi-Hung Tsai Long-Jei Du Ya-Chin King
Affiliation:Microelectron. Lab., Nat. Tsing-Hua Univ., Hsinchu, Taiwan;
Abstract:Circuit reliability of class-E and class-A power amplifiers is investigated based on a newly developed degradation subcircuit model. Measured degradation characteristics on the fabricated circuits agree well with the simulation predictions. Using this model, we have found that the class-E amplifier degrades faster than a class-A amplifier, due to a much higher stress level during switching. With a drastic decrease of PAE, a shorter lifetime is expected for a class-E amplifier.
Keywords:
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