基于PECVD的SiO2薄膜制备研究进展

二氧化硅(SiO₂)薄膜因其卓越的光学性能，在半导体器件、集成电路、光学涂层等领域具有巨大的应用潜力。然而，SiO₂薄膜制备过程中面临表面粗糙度、杂质控制和致密性等问题。为解决这些问题，研究者们通过工艺改进和表面修饰等手段来提高SiO₂薄膜的性能。在众多SiO₂薄膜制备技术中，等离子体增强化学气相沉积(Plasma-Enhanced Chemical Vapor Deposition, PECVD)技术由于沉积SiO₂薄膜所需温度低、原位生长等优势，成为制备SiO₂薄膜最常用的方法。综述了用PECVD技术制备SiO₂薄膜的发展历程，并探讨了关键工艺参数和后处理工艺对薄膜质量的影响。对PECVD技术的深入研究，有助于实现对SiO₂薄膜生长的更精准控制，进一步拓展其广泛的应用前景。

Research Progress on the Preparation of SiO2 Thin Films Based on PECVD

Silica (SiO₂) thin films have enormous potential for applications in semiconductor devices, integrated circuits, optical coatings, and other fields due to their excellent optical properties. However, the preparation process of SiO₂ thin films faces some issues such as surface roughness, impurity control, and compactness. To address these issues, researchers have improved the performance of SiO₂ thin films through process improvements and surface modifications. Among the many techniques for preparing SiO₂ thin films, plasma enhanced chemical vapor deposition (PECVD) has become the most commonly used method for preparing SiO₂ thin films due to its advantages such as low temperature required for deposition and in-situ growth. This article reviews the development of preparing SiO₂ thin films using PECVD technology, and explores the influence of key process parameters and post-treatment processes on the quality of the films. The in-depth study of PECVD technology helps to achieve more precise control of SiO₂ film growth and further expand its broad application prospects.