ZnMn2O4陶瓷的固相法合成及其电性能

采用传统固相合成工艺制备ZnMn2O4陶瓷,借助XRD、SEM等分析手段确定制备ZnMn2O4陶瓷所需的最佳预烧温度和烧结温度,研究不同烧结温度对ZnMn2O4陶瓷交流阻抗谱的影响。介绍了ZnMn2O4薄膜的制备和阻变特性。结果表明:ZnMn2O4陶瓷的最佳预烧温度和烧结温度分别为750、1 100℃;在750℃预烧、1 100℃烧结温度条件下,几乎没有气孔;ZnMn2O4陶瓷模拟等效电路为(R(C(RQ))),低频区电荷扩散属于平面无限扩散过程,高频区界面阻抗近似无穷大;介电常数随烧结温度的增大而减小,介电损耗随烧结温度的增大而增大;磁控溅射可得到ZnMn2O4薄膜且具备阻变特性。

Synthesis and electrical properties of ZnMn_2O_4 ceramics fabricated by solid state method

ZnMn2O4 ceramics were fabricated by solid state synthesis method. The presintering and sintering temperature of ZnMn2O4 ceramics were investigated by XRD and SEM. Impedance characteristics of ceramics at different sintering temperature were also studied. The ZnMn2O4 films and its resistance switching characteristics were also introduced. The result shows that at presintering temperature of 750 ℃ and sintering temperature of 1 100 ℃,there are almost no porosity. The simulation equivalent circuit is(R(C(RQ))),in the low frequency range,it has Warburg effect,and in the high frequency range,the interface impedance is similar to infinity. The dielectric property has the rule of the higher sintering temperature,the lower dielectric constant and higher dielectric loss. ZnMn2O4 films can be fabricated by magnetron sputtering and have resistance switching characteristics.