| 4H-SiC功率MESFET直流I-V特性解析模型 |
| |
| 引用本文： | 徐跃杭,徐锐敏,延波,国云川,王磊. 4H-SiC功率MESFET直流I-V特性解析模型[J]. 微电子学, 2007, 37(1): 1-4 |
| |
| 作者姓名： | 徐跃杭 徐锐敏 延波 国云川 王磊 |
| |
| 作者单位： | 电子科技大学,微波工程系,四川,成都,610054 |
| |
| 基金项目： | 国家重点基础研究发展计划(973计划) |
| |
| 摘 要： | 提出了一种改进的4H-SiC MESFET大信号直流解析模型。该模型基于栅极下面电荷的二维分布进行分析,在考虑电场相关迁移率、速度饱和及沟道内电荷堆积的基础上,计入沟道长度调制效应,建立基于物理的沟道长度调制效应模型。计算结果表明,计入沟道长度调制效应后的直流模型在饱和区与实测的I-V特性较为吻合。
|
| 关 键 词： | I-V特性 解析模型 |
| 文章编号： | 1004-3365（2007）01-0001-04 |
| 修稿时间： | 2006-06-22 |
An Analytical Model of I-V Characteristics of 4H-SiC Power MESFET''''s |
| |
| XU Yue-hang,XU Rui-min,YAN Bo,GUO Yun-chuan,WANG Lei. An Analytical Model of I-V Characteristics of 4H-SiC Power MESFET''''s[J]. Microelectronics, 2007, 37(1): 1-4 |
| |
| Authors: | XU Yue-hang XU Rui-min YAN Bo GUO Yun-chuan WANG Lei |
| |
| Affiliation: | Dept. o f Microwave Engineering, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, P. R. China |
| |
| Abstract: | An improved analytical model for 4H-SiC MESFET's was developed,which is based on an analysis of the 2-D distribution of charges under the gate,with field-dependence mobility,velocity saturation,charge buildup and channel-length modulation effects taken into consideration.Simulation results show that the model with channel-length modulation effects included agrees with the measured I-V characteristics in the saturation region. |
| |
| Keywords: | 4H-SiC MESFET |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
|
