| 高温恒定电场栅氧化层TDDB寿命测试方法研究 |
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| 引用本文： | 王涛,李斌,罗宏伟. 高温恒定电场栅氧化层TDDB寿命测试方法研究[J]. 电子产品可靠性与环境试验, 2004, 0(2): 10-13 |
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| 作者姓名： | 王涛 李斌 罗宏伟 |
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| 作者单位： | 华南理工大学应用物理系,广东,广州,510640;信息产业部电子第五研究所,广东,广州,510610 |
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| 摘 要： | 介绍了薄栅氧化层TDDB可靠性评价的高温恒定电场试验方法，并完成了E模型的参数提取，同时以MOS电容栅电流Ig为失效判据。对某工艺的MOS电容栅氧化层TDDB寿命进行了评价。该试验方法解决了在高温条件下对工作器件进行可靠性评价的问题，方法简便可靠，适用于亚微米和深亚微米工艺线的可靠性评价。
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| 关 键 词： | 栅氧化层 可靠性评价 模型 参数提取 |
| 文章编号： | 1672-5468(2004)02-04 |
| 修稿时间： | 2003-09-10 |
High Temperature and Constant Electric Field TDDB Test of Thin Gate Oxide |
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| WANG Tao,LI Bin,LUO Hong-wei. High Temperature and Constant Electric Field TDDB Test of Thin Gate Oxide[J]. Electronic Product Reliability and Environmental Testing, 2004, 0(2): 10-13 |
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| Authors: | WANG Tao LI Bin LUO Hong-wei |
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| Abstract: | In this paper, a TDDB method based on the constant electric field at high temperature is introduced; E model parameter is extracted from the results of the accelerated lifetime experiment. Moreover, the reliability of gate oxide is evaluated according to the failure criterion of MOS capacitor gate current. Therefore the method to evaluate the reliability of the devices operated at high temperature is presented. This method is convenient and reliable. It is feasible for the evaluation of sub - micrometer and deep sub - micrometer processes. |
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| Keywords: | gate oxides reliability evaluation model parameter extraction |
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