热处理方法改善CdZnTe晶体性能研究

对电阻率为10^3-6Ω·cm的In掺杂Cd0．9Zn0．1Te晶片在Te气氛和Cd／Zn平衡蒸汽压下进行了热处理，对电阻率为10^8-9Q·cm的非掺杂晶片则在In气氛和Cd／Zn平衡蒸汽压下进行了热处理。结果表明，In掺杂Cd0．9Zn0．1Te晶片经处理后电阻率可提高3个数量级。非掺杂晶片在In气氛中热处理可很容易地改变导电类型，在热处理温度700℃，In分压6．1×10^-4Pa，退火时间达48h后，电阻率可以提高到2．6×10^9Ω·cm。

Improving the Properties of CdZnTe Crystals by Annealing Processes

The as-grown In-doped Cd0.9Zn0.1Te wafers of ρ about 103～6 Ω·cm were annealed in Te atmosphere under Cd/Zn equilibrium pressures and the as-grown non-doped Cd0.9Zn0.1Te wafers of ρ about 108～9 Ω·cm were annealed under In+Cd/Zn equilibrium pressures. The results show that for the In-doped annealed wafer, the resistivity could be raised by three orders.And it is found that the conductivity type of the non-doped CZT wafers could be changed easily during the In vapor phase annealing process, and the resistivity of the wafer could be raised up to 2.6 × 109 Ω·cm when it was annealed at 700℃ under the In pressure of 6.1 × 10-4 Pa for 48 h.