Effects of SiC buffer layer growth temperature on the residual strain of GaN/SiC/Si thin films |
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| Authors: | Jang-Ho Park Byung-Teak Lee |
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| Affiliation: | a Photonic and Electronic Thin Film Laboratory, Department of Materials Science and Engineering, Chonnam National University, 300 Yong-bong dong, Gwangju 500-757, Republic of Korea
b Department of Biomedical Engineering, Nambu University, Gwangju, Republic of Korea |
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| Abstract: | Effects of SiC buffer layers were studied on the residual strain of GaN films grown on 3C-SiC/Si (111) substrates. It was clearly observed by Raman scattering measurement that the residual strain of the GaN/Si is reduced by inserting the SiC intermediate layer. Furthermore, residual strain within the GaN/SiC/Si films decreased when the growth temperature of the SiC buffer layer decreased. It was proposed that the irreversible creep phenomenon occurs during the high temperature growth of SiC, affecting nature of the residual strain within the SiC and the GaN layers. |
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| Keywords: | Chemical vapour deposition Epitaxial growth GaN GaN on Si SiC buffer Residual stress |
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