Loss characteristics of high-/spl epsiv//sub r/ microstrip lines fabricated by an etchable thick-film on ceramic MCM technology

Etchable thick-film multi-chip-module (MCM) technology has led to the possibility of fabricating microwave integrated circuits (MICs) with performance similar to MICs produced using more expensive conventional thin-film MCM-D techniques. However, little data is available on the loss characteristics of the technology at microwave frequencies. This paper describes an experimental investigation into the loss properties of high-definition etchable thick-film MCM microstrip lines formed on a variety of high dielectric constant (high-/spl epsiv//sub r/) ceramic substrates. Substrates investigated comprise 96% alumina (/spl epsiv//sub r/=9.5), (Zr,Sn)TiO/sub 4/(/spl epsiv//sub r/=36.6) and BaO-PbO-Nd/sub 2/O/sub 3/-TiO/sub 2/ (/spl epsiv//sub r/=90.9). Microstrip loss properties are determined by fabricating a series of loosely coupled half-wave resonators on each substrate, with a range of characteristic impedance values. Measurements to 6 GHz are compared to those for similar lines fabricated using conventional thin-film MCM-D technology. The results demonstrate that etchable thick-film MCM technology provides many of the advantages of thin-film MCM-D technology, such as low-loss and high-definition conductors, and is suitable for the cost-effective fabrication of miniaturised high-performance microstrip MICs in high volume.