Ion induced segregation in gold nanostructured thin films on silicon |
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Authors: | J. Ghatak |
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Affiliation: | Institute of Physics, Sachivalaya Marg, Bhubaneswar, Orissa 751 005, India |
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Abstract: | We report a direct observation of segregation of gold atoms to the near surface regime due to 1.5 MeV Au2+ ion impact on isolated gold nanostructures deposited on silicon. Irradiation at fluences of 6 × 1013, 1 × 1014 and 5 × 1014 ions cm−2 at a high beam flux of 6.3 × 1012 ions cm−2 s−1 show a maximum transported distance of gold atoms into the silicon substrate to be 60, 45 and 23 nm, respectively. At a lower fluence (6 × 1013 ions cm−2) transport has been found to be associated with the formation of gold silicide (Au5Si2). At a high fluence value of 5 × 1014 ions cm−2, disassociation of gold silicide and out-diffusion lead to the segregation of gold to defect - rich surface and interface regions. |
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Keywords: | 61.80.Jh 68.35.&minus p 68.37.Lp 68.37.Ma 66.30.Jt |
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