Self-consistent calculation for valence subband structure and hole mobility in p-channel inversion layers

Using six- and eight-band k⋅p models—with parameters calibrated against the bulk band structure obtained using non-local empirical pseudopotentials—we have employed a new hybrid self-consistent method to calculate the valence subband structure in p-channel inversion layers of InAs, InSb, GaAs, In_0.53Ga_0.47As, and GaSb. This method involves two separate stages: first, density-of-states (DOS) of the three lowest-energy subbands (heavy, light, and split-off holes) is calculated using the triangular-well approximation. Then, the self-consistent calculation is performed using the DOS previously obtained, but shifting each subband by the amount obtained from the self-consistent eigenvalues obtained during the self-consistent iteration. Finally, we present results regarding the hole mobility in Ge p-channel inversion layers. The results are compared to those obtained employing the subband structure computed with the triangular-well approximation and also with experimental data.