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Crystal structure, thermal expansion and electrical properties of a new compound Al0.33DyGe2 |
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| Authors: | Pingli Qin Yeqing Chen Wei He Lingmin Zeng |
| Affiliation: | a Key Laboratory of Nonferrous Metal Materials and New Processing Technology, Ministry of Education Guangxi University, Nanning, Guangxi, 530004, PR China b School of Science, Wuhan Institute of Technology, Wuhan, Hubei, 430073, PR China c College of Electronic and Communication Engineering, Guangxi University for Nationalities, Nanning, 530006, PR China |
| Abstract: | A new ternary compound Al0.33DyGe2 has been synthesized and studied from 298 K to773 K by means of X-ray powder diffraction technique. The crystal structural refinement of Al0.33DyGe2 has been performed by using the Rietveld method. The ternary compound Al0.33DyGe2 crystallizes in the orthorhombic of the defect CeNiSi2-type structure (space group Cmcm, a = 0.41018(2)nm, b = 1.62323(6)nm, c = 0.39463(1)nm, Z = 4 and Dcalc = 8.004 g/cm3). The average thermal expansion coefficients αa, αb and αc of Al0.33DyGe2 are 1.96 × 10− 5 K− 1, 0.93 × 10− 5 K− 1 and 1.42 × 10− 5 K− 1, respectively. The bulk thermal expansion coefficient αV is 4.31 × 10− 5 K− 1. The resistivity is observed to fall from 387 to 308 µΩ cm between room temperature and 25 K. |
| Keywords: | Crystal structure Electrical properties Thermal properties X-ray techniques |
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