Large-Format HgCdTe Dual-Band Long-Wavelength Infrared Focal-Plane Arrays |
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Authors: | E P G Smith G M Venzor A M Gallagher M Reddy J M Peterson D D Lofgreen J E Randolph |
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Affiliation: | 1.Raytheon Vision Systems,Goleta,USA |
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Abstract: | Raytheon Vision Systems (RVS) continues to further its capability to deliver state-of-the-art high-performance, large-format,
HgCdTe focal-plane arrays (FPAs) for dual-band long-wavelength infrared (L/LWIR) detection. Specific improvements have recently
been implemented at RVS in molecular-beam epitaxy (MBE) growth and wafer fabrication and are reported in this paper. The aim
of the improvements is to establish producible processes for 512 × 512 30-μm-unit-cell L/LWIR FPAs, which has resulted in: the growth of triple-layer heterojunction (TLHJ) HgCdTe back-to-back photodiode
detector designs on 6 cm × 6 cm CdZnTe substrates with 300-K Fourier-transform infrared (FTIR) cutoff wavelength uniformity
of ±0.1 μm across the entire wafer; demonstration of detector dark-current performance for the longer-wavelength detector band approaching
that of single-color liquid-phase epitaxy (LPE) LWIR detectors; and uniform, high-operability, 512 × 512 30-μm-unit-cell FPA performance in both LWIR bands. |
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