Lifetime broadening in GaAs-AlGaAs quantum well lasers |
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Authors: | Kucharska A.I. Robbins D.J. |
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Affiliation: | Philips Res. Lab., Redhill; |
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Abstract: | Experimental observations of spontaneous emission spectra from GaAs-AlGaAs quantum well lasers shown that spectral broadening should be included in any realistic model of laser performance. A model of the lifetime broadening due to intraband Auger processes of the Landsberg type is described and developed for the case of electron-electron scattering in a 2-D system. The model is applied to the calculation of gain and spontaneous emission spectra and gain-current relationships in short-wavelength GaAs-AlGaAs quantum well lasers, and the results are compared with those obtained using both a fixed intraband scattering time and one that varies as n-1/2, where n is the volume injected carrier density |
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