(1) Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev, 03028, Ukraine;(2) Kiev National University, Vladimirskaya ul. 64, Kiev, 03127, Ukraine
Abstract:
The effect of a threshold process of surface melting on the acoustic response in CdTe and GaAs subjected to pulsed laser radiation is considered and the mechanisms of excitation of sonic signals are analyzed. Melting thresholds of the surface of binary compounds CdTe and GaAs are established under irradiation by pulses of nanosecond duration of ruby and neodymium lasers from measurements of the amplitude of the acoustic response.