电离辐照下Si-SiO_2的光频电容率

采用软X射线激发光电子能增（XPS），观测了抗辐射加固与非加固Si-SiO2经60Co辐照前、后的光频电容率变化。结果显示；辐照与未辐照非加固Si-SiO2光频电容率在沿Si-SiO2的深度分布上呈现一个位于界面区的峰谷．辐照后光频电容率与未辐照光频电容率之比亦出现一个峰谷；加固与非加固Si-SiO2界面区光频电容率均随辐照剂量的增加而降低，其中非加固样品的减少明显于加固样品的减少。文中以完整SiO2等离子体激元密度与纯Si等离子体激元密度在界面区的相对变化，探讨了电离辐射致光频电容率变化的机制。

Optical Frequency Capacitivity of Si-SiO_2 in Radiation Field

The optical frequency capacitivities of radiation tolerant and radiationintolerant Si-SiO2,before and after irradiation,have been measured by using X-rayphotoelectron spectroscopy (XPS). The experimental results indicate that ① thereis one valley in profiles of optical frequency capacitivity along SiO2-Si before and after radiation；② The optical frequency capacitivities of radiation tolerant and radiation intolerant samples decrease with the increasing of radiation dose,the drops ofradiation intolerant sample are more remarkable than that of rdiation tolerant sample. Some viewpoints of the relative change in plasma density between perfect SiO2and pure Si are proposed to explain the mechanism of varying of opticalfrequency capacitivity caused by ionization radiation are proposed.