Characterization of crystalline MOCVD SrTiO3 films on SiO2/Si(100) |
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| Authors: | A. Sibai, S. Lhostis, Y. Rozier, O. Salicio, S. Amtablian, C. Dubois, J. Legrand, J.P. S nateur, M. Audier, L. Hubert-Pfalzgraff, C. Dubourdieu,F. Ducroquet |
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| Affiliation: | aLaboratoire de Physique de la Matière, UMR CNRS 5511, INSA – Lyon, Bât B. Pascal, BP 69, 69621 Villeurbanne, France;bLaboratoire des Matériaux et du Génie Physique, UMR CNRS 5628, INPG-ENSPG, BP46, 38402 St Martin d’Hères, France;cSTMicroelectronics, 850 rue J. Monnet, 38926 Crolles Cedex, France;dInstitut de Recherches sur la Catalyse, 2 av A. Einstein, 69626 Villeurbanne, France |
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| Abstract: | SrTiO3 thin films (STO), were deposited on Si(100) covered by 2 nm of SiO2, at different temperatures from 450 °C to 850 °C using liquid injection MOCVD, the bimetallic precursor being Sr2Ti2(OiPr)8(tmhd)4. The STO films were analysed by XRD, FTIR, SIMS and TEM. An amorphous layer was observed between STO and SiO2/Si. The nature and thickness of the interlayer were determined, as well as the most favourable conditions for a good quality crystalline STO film, and a reduced interlayer. |
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