A high density CMOS inverter with stacked transistors |
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Abstract: | This paper describes a complete CMOS inverter, whose P-channel transistor is made from laser annealed polycrystalline silicon and is superimposed upon the N-channel transistor. The single gate is common to both transistors. The process is NMOS compatible and polysilicon transistors with channel lengths down to 4 micrometers have been made. |
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