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Al/Al2O3多层膜的研究
引用本文:周丽梅,薛钰芝,钟金德,张兴寰. Al/Al2O3多层膜的研究[J]. 真空, 2006, 43(1): 24-26
作者姓名:周丽梅  薛钰芝  钟金德  张兴寰
作者单位:大连交通大学材料科学与工程学院,辽宁,大连,116028
摘    要:用真空蒸镀及自然氧化方法在玻璃基底上制备纳米量级的4、5、6、7对层的Al/Al2O3多层膜。采用称重法测定薄膜的厚度;在常温和低温下使用三点法测定多层膜的电特性;用扫描电镜(sEM)观察薄膜的表面和截面的形貌及成分。结果表明:制备的是纳米量级非晶态的Al/Al2O3多层膜,在常温和低温(77K)下均具有类似负阻的特性。

关 键 词:多层膜  类负阻效应
文章编号:1002-0322(2006)01-0024-03
收稿时间:2005-06-25
修稿时间:2005-06-25

On the Al/Al2O3 multi-layer thin films
ZHOU Li-mei,XUE Yu-zi,ZHONG Jin-de,ZHANG Xing-huan. On the Al/Al2O3 multi-layer thin films[J]. Vacuum(China), 2006, 43(1): 24-26
Authors:ZHOU Li-mei  XUE Yu-zi  ZHONG Jin-de  ZHANG Xing-huan
Affiliation:School of Materials Science and Engineering, Dalian JiaoTong University, Dalian 116028,China
Abstract:Al/Al_2O_3 multi-layer thin films incluning 4,5,6 or 7 bilayers compoed of metal and oxide nanofilms were deposited on glass substrates by vacuum evaporation process and spontaneous oxidation.The samples were weighted to evaluate thin film's thickness.Their electric properities were tested at room/low temperature,and their surface and sectional morphologies/composition were observed via SEM.The results showed that the Al/Al_2O_3 multi-layer thin films prepared are of amouhrphous structure with negative-resistance-like effect at room/low temperature(77 K).
Keywords:multi-layer   negative-resistance-like effect
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