New self-aligned planar resonant-tunneling diodes for monolithiccircuits |
| |
| Authors: | Chen C.L. Mathews R.H. Mahoney L.J. Maki P.A. Molvar K.M. Sage J.P. Fitch G.L. Sollner T.C.L.G. |
| |
| Affiliation: | Lincoln Lab., MIT, Lexington, MA; |
| |
| Abstract: | Resonant-tunneling diodes (RTDs) with a new planar configuration have been fabricated with a new self-aligned process that is compatible with that of silicon integrated-circuits technology. The size of the RTD is determined by a shallow boron implant, and the individual RTDs are isolated by a deep proton implant. There is no deep mesa etch. Because of the self-alignment nature of the process, the peak current and voltage of the RTDs are highly uniform. The mean of the standard deviation of the peak current for 4-μm2 RTDs is 2.3% and the smallest RTDs fabricated are less than 1 μm2 |
| |
| Keywords: | |
|
|
